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ECCS-EPSRC: Nitride Super-Junction HEMTs for Robust, Efficient, Fast Power Switching [Clear]

# Title Funder Funding Start End Status
61 The use of GaN Transistors as radiation hard high-voltage switches STFC
£1,000,406
 June 30, 2020 Aug. 31, 2022 Closed
62 The use of GaN Transistors as radiation hard high-voltage switches STFC
£2,501,015
 June 30, 2020 Sept. 1, 2022 Closed
63 Metal Oxide RF Integrated Circuits for Internet of Things Connectivity EPSRC
£0
 Sept. 26, 2018 Dec. 31, 2021 Closed
64 Converter Architectures EPSRC
£2,518,800
 Nov. 1, 2017 Oct. 30, 2021 Closed
65 Converter Architectures EPSRC
£6,297,000
 Nov. 1, 2017 Oct. 31, 2021 Closed
66 Deposition of Tantalum Carbide (TaC) on graphite as a coating barrier during the manufacture of Silicon Carbide (SiC) electronic materials UKRI
£1,591,454
 Nov. 4, 2020 Nov. 3, 2024 Active
67 Deposition of Tantalum Carbide (TaC) on graphite as a coating barrier during the manufacture of Silicon Carbide (SiC) electronic materials FLF
£3,978,635
 Nov. 4, 2020 Nov. 3, 2024 Active
68 Silicon-Silicon Carbide (Si/SiC) Power Devices for high temperature, hostile environment applications EPSRC
£198,116
 Dec. 1, 2015 May 30, 2018 Closed
69 Materials Challenges in GaN-based Light Emitting Structures EPSRC
£570,515
 Nov. 27, 2006 Feb. 26, 2010 Closed
70 Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors EPSRC
£585,700
 June 29, 2011 Sept. 28, 2014 Closed
71 Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors EPSRC
£579,970
 May 31, 2011 Oct. 31, 2014 Closed
72 Defect reduction in GaN using the in-situ growth of transition metal nitride layers EPSRC
£198,345
 Jan. 1, 2008 June 30, 2008 Closed
73 Defect reduction in GaN using the in-situ growth of transition metal nitride layers EPSRC
£71,110
 Nov. 1, 2007 April 30, 2008 Closed
74 Development of high breakdown, high power InP pHEMTS for millimeter wave frequency applications STFC
£181,004
 Jan. 7, 2008 Jan. 6, 2009 Closed
75 Silicon Carbide Trench Refill Epitaxy for Super-Junction High Voltage Power Devices EPSRC
£0
 Oct. 2, 2022 March 30, 2026 Active
76 Materials Challenges in GaN-based Light Emitting Structures EPSRC
£6,810,710
 Nov. 1, 2006 Sept. 30, 2010 Closed
77 Materials Challenges in GaN-based Light Emitting Structures EPSRC
£2,617,155
 March 1, 2007 July 31, 2010 Closed
78 Evaluation of beta-Ga2O3 for high power RF device applications EPSRC
£509,498
 Sept. 30, 2019 March 30, 2021 Closed
79 Feasibility assessment of a novel light-weight ultra-efficient Gallium Nitride (GaN) traction inverter for ultra-low emission vehicles Innovate UK
£498,925
 Sept. 30, 2020 March 31, 2021 Closed
80 Van der Waals Ga2O3 functional materials epitaxy: Revolutionary power electronics EPSRC
£201,458
 Nov. 1, 2022 April 29, 2024 Active
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