# Title Funder Funding Start End Status
1 Amorphous and crystalline GaNAs alloys for solar energy conversion devices EPSRC
£832,412
Jan. 1, 2011 June 29, 2014 Closed
2 Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting EPSRC
£87,490
Aug. 31, 2008 Aug. 30, 2009 Closed
3 Feasibility study of growth by MBE of As doped GaN layers for photoanode applications in hydrogen production by photoelectrochemical water splitting EPSRC
£218,725
Aug. 31, 2008 Aug. 31, 2009 Closed
4 Earth-abundant catalysts and novel layered 2D perovskites for solar water splitting (H2CAT) EPSRC
£2,379,728
May 31, 2021 May 30, 2024 Active
5 Earth-abundant catalysts and novel layered 2D perovskites for solar water splitting (H2CAT) EPSRC
£5,949,320
May 31, 2021 May 31, 2024 Active
6 GaN devices for more powerful electronics EPSRC
£0
July 31, 2017 Nov. 30, 2018 Closed
7 Band alignment of light harvesting nanomaterials and metal oxides for photovoltaic and photocatalytic applications. EPSRC
£21,838
Aug. 28, 2017 Feb. 28, 2018 Closed
8 Nanolaminate dielectrics and GaN nanostructures for device applications EPSRC
£0
Aug. 31, 2019 Aug. 30, 2022 Active
9 Nanolaminate dielectrics and GaN nanostructures for device applications EPSRC
£0
Aug. 31, 2019 Aug. 31, 2022 Closed
10 Investigation of new semiconductor materials for wide band-gap devices EPSRC
£0
Sept. 30, 2019 June 29, 2023 Active
11 Investigation of new semiconductor materials for wide band-gap devices EPSRC, NERC
£0
Sept. 30, 2019 June 30, 2023 Closed
12 Solar Optofluidics (SOLO): Water Splitting beyond the 1.23 eV Thermodynamic Constraints EPSRC
£202,234
Jan. 1, 2018 May 30, 2018 Closed
13 Solar Optofluidics (SOLO): Water Splitting beyond the 1.23 eV Thermodynamic Constraints EPSRC
£167,350
Aug. 31, 2018 Jan. 14, 2020 Closed
14 Instrument to identify defects and impurities in wide band gap semiconductors via excited states EPSRC
£1,582,044
March 31, 2017 March 30, 2020 Closed
15 Instrument to identify defects and impurities in wide band gap semiconductors via excited states EPSRC
£3,955,110
March 31, 2017 March 31, 2020 Closed
16 Defect reduction in GaN using the in-situ growth of transition metal nitride layers EPSRC
£198,345
Jan. 1, 2008 June 30, 2008 Closed
17 Defect reduction in GaN using the in-situ growth of transition metal nitride layers EPSRC
£71,110
Nov. 1, 2007 April 30, 2008 Closed
18 RF Power Amplifiers based on GaN HEMT Technology in the W-Band EPSRC
£0
Sept. 30, 2018 Sept. 29, 2022 Active
19 Vertical cubic GaN LEDs on 150mm 3C-SiC substrates EPSRC
£416,220
Feb. 1, 2017 June 29, 2018 Closed
20 Vertical cubic GaN LEDs on 150mm 3C-SiC substrates EPSRC
£1,040,550
Feb. 1, 2017 June 30, 2018 Closed
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