Integrated quantum devices based on ion-implanted semiconductors.

Find Similar History 34 Claim Ownership Request Data Change Add Favourite

Title
Integrated quantum devices based on ion-implanted semiconductors.

CoPED ID
ce787f57-31eb-4582-b69a-9d2652da0f24

Status
Active

Funders

Value
No funds listed.

Start Date
Sept. 30, 2021

End Date
March 30, 2025

Description

More Like This


The ability to introduce alien atomic species into microscopic regions of a semiconductor material, a technique widely known as doping, has been the cornerstone for the build-up of modern integrated electronics. In fact, this is how the electrical conductivity of semiconductors is locally controlled through ion implantation. However, during the implantation process, high energy collisions between these dopants and the semiconductor target can generate significant crystal damage. Although this may be a problem for the reliability of electronic chips, it has been shown that some atomic defects have very interesting physical properties and lend themselves to the realisation of quantum devices. In other cases, the ions themselves have quantum properties that can be used for developing quantum technologies. Formidable examples are
1) the atomic defects created by the implantation of C atoms in silicon carbide (SiC), which are spinactive and luminescent.
2) transition metal ions in SiC that are spin active and emit in the telecom band suitable for optical fibre transmission
3) Phosphorus and Boron ions in silicon that host quantum bits of the highest quality among solid state systems.

In this project, the student will be involved in designing, manufacturing and characterising quantum devices based on implanted ions. In order to improve the reliability and yield of these electronic systems, they will be studied both electrically and optically with a compare and contrast approach. There will be the opportunity to explore different types of ions and host semiconductors to cater for applications in quantum computing as well as sensing and metrology. The research activities will balance device design and modelling, hands-on cleanroom fabrication, as well as electrical and optical experimental measurements with cryogenic set-ups. The student will be involved in making and characterising devices that span from metaloxide-semiconductor nano-capacitors to superconductive microwave resonators and LEDs, in order to couple spins to electromagnetic radiation.

Alessandro Rossi SUPER_PER
Megan Powell STUDENT_PER

Subjects by relevance
  1. Semiconductors
  2. Quantum physics
  3. Ions
  4. Electronics
  5. Implants
  6. Semiconductor technology
  7. Doping (semiconductor technology)
  8. Quantum mechanics
  9. Atomic physics
  10. Metrology

Extracted key phrases
  1. Integrated quantum device
  2. Modern integrated electronic
  3. Quantum property
  4. Quantum technology
  5. Quantum bit
  6. Quantum computing
  7. Ion implantation
  8. Transition metal ion
  9. Host semiconductor
  10. Semiconductor material
  11. Boron ion
  12. Semiconductor target
  13. Semiconductor nano
  14. Device design
  15. Alien atomic specie

Related Pages

UKRI project entry

UK Project Locations