Study and assessment of technical and commercial feasibility of a new Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) technology for High Voltage DC (HVDC) electricity transmission for offshore renewables
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Study and assessment of technical and commercial feasibility of a new Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) technology for High Voltage DC (HVDC) electricity transmission for offshore renewables
CoPED ID
adf1ef49-58d4-45f1-af53-25eb20602126
Status
Closed
Funders
Value
£49,540
Start Date
July 31, 2014
End Date
Nov. 30, 2014
Description
The project aims to study and assess the technical and commercial feasibility of a new Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) technology for large-scale power electronics inverters used in High Voltage DC (HVDC) electricity transmission for offshore renewables. The new technology offers substantial improvement in reliability and efficiency and reduction in manufacturing cost of SiC BJT power semiconductor devices, enabling more widespread application of HVDC grids; its exploitation can potentially reduce the Levelised Cost of Energy (LCOE) from offshore wind by 5.3% when compared to existing Silicon (Si) based HVDC inverters.
Reliawind Limited | LEAD_ORG |
Reliawind Limited | PARTICIPANT_ORG |
Ehsan Jalebi | PM_PER |
Subjects by relevance
- Semiconductors
- Electrical power networks
- Costs
- Semiconductor technology
- Power electronics
- Transmission of electricity
- Transistors
- Electronics
- Wind energy
- Renewable energy sources
- Converters (electrical devices)
- Electrical engineering
- Electricity
- Energy efficiency
- Voltage
- Distribution of electricity
Extracted key phrases
- New Silicon Carbide
- New technology
- Commercial feasibility
- Bipolar Junction Transistor
- Study
- High Voltage DC
- Offshore renewable
- Sic BJT power semiconductor device
- Scale power electronic inverter
- HVDC inverter
- Electricity transmission
- HVDC grid
- Offshore wind
- Technical