Single Event Effects in Resistive Random Access Memory Using Amorphous SiC

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Title
Single Event Effects in Resistive Random Access Memory Using Amorphous SiC
CoPED ID
6e227224-c8a1-4125-9121-1e9d37e32a54
Status
Closed
Funders
EPSRC
EPSRC
Value
No funds listed.
Start Date
April 2, 2017
End Date
April 1, 2021
Description

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Resistive random access memory (ReRAM) are structures that exhibit both a low resis-
tance and high resistance states when a specic voltage bias is placed across the cell. In
this report a focus on the use of silicon carbide based cells has been conducted, due to
its high resistive ratio and wide use in the back end of the line fabrication.

University of Southampton LEAD_ORG
AWE STUDENT_PP_ORG

Cornelis Hendrik De Groot SUPER_PER
Omesh Kapur STUDENT_PER

Subjects by relevance
  1. Random access memories
  2. Exhibitions
  3. Cells

Extracted key phrases
  1. Resistive Random Access Memory
  2. Single Event Effects
  3. Wide use
  4. High resistive ratio
  5. Amorphous sic
  6. High resistance state
  7. Specic voltage bias
  8. Low resis-
  9. Cell
  10. Silicon carbide

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