PEARGaN - Power Electronics Applications for Reliability in GaN
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Gallium Nitride (GaN) is being grown on Silicon substrates by the semiconductor manufactures to create discrete devices for high-voltage power electronics applications, with the potential to deliver superior performance in breakdown voltage, on-state resistance and higher switching speeds, reducing system losses and enabling greater levels of efficiency at lower cost than current solutions. The PEARGaN project has assembled a consortium of world class partners from UK industry and academia, to develop new system level concepts and circuit architectures, evaluate advanced manufacturing process technologies and create device demonstrators to fully understand the device behaviour and failure mechanisms, proving that these devices are robust and can deliver the required levels of life-time reliability that is demanded by the early adopters in a broad range of power management and control applications.
| IQE (Europe) Limited | LEAD_ORG |
| Nexperia UK Ltd. | PARTICIPANT_ORG |
| University of Bristol | PARTICIPANT_ORG |
| The Victoria University of Manchester | PARTICIPANT_ORG |
| IQE (Europe) Limited | PARTICIPANT_ORG |
| The Russell Group of Universities | PARTICIPANT_ORG |
| Trevor Martin | PM_PER |
Subjects by relevance
- Semiconductors
- Power electronics
- Electronics
- Switching devices
- Gallium nitride
- Gallium
- Devices
- Manufacturing
- Electronic devices
- Electrical engineering
Extracted key phrases
- PEARGaN project
- Power Electronics Applications
- Voltage power electronic application
- New system level concept
- Gallium Nitride
- Discrete device
- Device behaviour
- Device demonstrator
- High switching speed
- Great level
- Breakdown voltage
- World class partner
- Advanced manufacturing process technology
- Silicon substrate
- Gan