High performance III-V semiconductor materials for magnetic Hall Effect sensors

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Title
High performance III-V semiconductor materials for magnetic Hall Effect sensors

CoPED ID
bbe0f082-d2ff-4d8d-8c53-1cbc13fa4dfd

Status
Closed


Value
£547,826

Start Date
Sept. 30, 2013

End Date
Sept. 29, 2015

Description

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A Hall effect sensor is a transducer that varies its output voltage in response to a magnetic field, used in a wide range of applications for proximity switching, positioning, speed detection, and current sensing. Typical Hall sensors are manufactured from silicon but are limited in terms of sensitivity and temperature operating range as a result of the fundamental material properties.
This project brings together a consortium of SMEs (Advanced Hall Sensors, Compound Semiconductor Technologies), Manchester University and a UK global metrology player, Renishaw, in order to develop a new family of industrial measurement products based on a novel material as an alternative to Silicon.
The new sensor concept uses compound semiconductor materials based on Gallium Arsenide which are engineered to use quantum effects for superior performance in real world, high-resolution metrology applications.

Subjects by relevance
  1. Sensors
  2. Semiconductors
  3. Metrology
  4. Electronics
  5. Measurement
  6. Semiconductor technology
  7. Measuring technology
  8. Measuring methods

Extracted key phrases
  1. Magnetic Hall Effect sensor
  2. Hall effect sensor
  3. High performance III
  4. Typical Hall sensor
  5. V semiconductor material
  6. Compound semiconductor material
  7. New sensor concept
  8. Advanced Hall Sensors
  9. Superior performance
  10. Fundamental material property
  11. Novel material
  12. Resolution metrology application
  13. UK global metrology player
  14. Magnetic field
  15. Quantum effect

Related Pages

UKRI project entry

UK Project Locations