History of changes to: Development of a High-Accuracy Embedded Temperature Sensor Circuit Targeting 16 nano-meter finFET CMOS Semiconductor Technologies
Date Action Change(s) User
Nov. 27, 2023, 2:12 p.m. Added 35 {"external_links": []}
Nov. 20, 2023, 2:03 p.m. Added 35 {"external_links": []}
Nov. 13, 2023, 1:33 p.m. Added 35 {"external_links": []}
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Jan. 28, 2023, 11:08 a.m. Created 43 [{"model": "core.projectfund", "pk": 26975, "fields": {"project": 4168, "organisation": 4, "amount": 92793, "start_date": "2014-09-30", "end_date": "2016-08-30", "raw_data": 42834}}]
Jan. 28, 2023, 10:52 a.m. Added 35 {"external_links": []}
April 11, 2022, 3:46 a.m. Created 43 [{"model": "core.projectfund", "pk": 19083, "fields": {"project": 4168, "organisation": 4, "amount": 92793, "start_date": "2014-09-30", "end_date": "2016-08-30", "raw_data": 19523}}]
April 11, 2022, 3:46 a.m. Created 41 [{"model": "core.projectorganisation", "pk": 72808, "fields": {"project": 4168, "organisation": 5625, "role": "PARTICIPANT_ORG"}}]
April 11, 2022, 3:46 a.m. Created 41 [{"model": "core.projectorganisation", "pk": 72807, "fields": {"project": 4168, "organisation": 5625, "role": "LEAD_ORG"}}]
April 11, 2022, 3:46 a.m. Created 40 [{"model": "core.projectperson", "pk": 44783, "fields": {"project": 4168, "person": 6078, "role": "PM_PER"}}]
April 11, 2022, 1:47 a.m. Updated 35 {"title": ["", "Development of a High-Accuracy Embedded Temperature Sensor Circuit Targeting 16 nano-meter finFET CMOS Semiconductor Technologies"], "description": ["", "\nMoortec Semiconductor Ltd develop on-chip monitoring circuits and intellectual property (IP)\nfor silicon chip devices manufactured on advanced technologies used in today\u2019s electronic\nproducts. Moortec plan to develop an innovative high-accuracy, reliable and testable\nembedded Temperature Sensor (TS) prototype IP that will measure the temperature of circuits\nmanufactured on 16 nano-meter (nm) finFET advanced CMOS technology nodes. With\nadvances in silicon CMOS technology and the scaling of transistor channel lengths to nanometer\ndimensions, the density of digital circuits per unit area of silicon has increased. This\nincrease in digital logic (or gate) density, which equates to an increase in power density, has\nbecome a major contributor to the heating of System on Chip (SoC) devices manufactured on\nadvanced CMOS nodes. The 16nm fin-FET (fin-based Field-Effect Transistor) technology is a\ncutting-edge technology for the manufacture of chips and Moortec\u2019s high accuracy\ntemperature sensor will possess features and address applications that go beyond what is\ncurrently commercially available to the designers and developers of semiconductor devices.\nThe primary application for on-chip temperature monitoring is performance optimisation, one\nsuch scheme being Dynamic Voltage and Frequency Scaling (DVFS) where depending on the\nthermal conditions, system clocks and voltage supplies can be varied to optimise either the\nspeed of logical operations or power consumed by the device. For safety critical devices, the\nsilicon temperature can be measured and monitored by the system, potentially throughout the\nlifetime of the device, allowing algorithms to be used to avoid high temperatures and hence\nhigh stress to the device. The outcome of the project will be a silicon-proven 16nm\ntemperature sensor IP that will be licensed to SoC developers world-wide. Moortec\u2019s aim is to\nbecome the primary IP vendor for on-chip PVT monitoring solutions for advanced node\nsemiconductors worldwide.\n\n"], "extra_text": ["", "\n\n\n\n"], "status": ["", "Closed"]}
April 11, 2022, 1:47 a.m. Added 35 {"external_links": [15856]}
April 11, 2022, 1:47 a.m. Created 35 [{"model": "core.project", "pk": 4168, "fields": {"owner": null, "is_locked": false, "coped_id": "42050ecb-6159-4cc8-87f5-d441763a1aca", "title": "", "description": "", "extra_text": "", "status": "", "start": null, "end": null, "raw_data": 19509, "created": "2022-04-11T01:38:04.183Z", "modified": "2022-04-11T01:38:04.183Z", "external_links": []}}]