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[{"model": "core.projectfund", "pk": 26896, "fields": {"project": 4089, "organisation": 2, "amount": 0, "start_date": "2017-07-13", "end_date": "2021-03-30", "raw_data": 42662}}]
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[{"model": "core.projectfund", "pk": 19004, "fields": {"project": 4089, "organisation": 2, "amount": 0, "start_date": "2017-07-13", "end_date": "2021-03-30", "raw_data": 19118}}]
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| April 11, 2022, 3:46 a.m. |
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[{"model": "core.projectorganisation", "pk": 72592, "fields": {"project": 4089, "organisation": 2207, "role": "LEAD_ORG"}}]
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| April 11, 2022, 3:46 a.m. |
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[{"model": "core.projectperson", "pk": 44634, "fields": {"project": 4089, "person": 5950, "role": "STUDENT_PER"}}]
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| April 11, 2022, 3:46 a.m. |
Created
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[{"model": "core.projectperson", "pk": 44633, "fields": {"project": 4089, "person": 2084, "role": "SUPER_PER"}}]
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| April 11, 2022, 1:47 a.m. |
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{"title": ["", "Novel AlAs-InGaAs-AlAs Resonant Tunnelling Diodes for THz"], "description": ["", "\nThe Double-Barrier Quantum Well\n(DBQW) RTD is considered as the most promising candidate for high-speed functional\ndevices and THz oscillators at room temperature. For THz oscillators, the highest\nfrequency of electronic single devices at room temperature reported recently (2016)\nis 1.9THz holding much promise for the realisation of compact and efficient electronic\nTHz oscillators\nThe DBQW-RTD in its simplest form, consists of a few monolayers undoped quantum\nwell sandwiched between two undoped layer of barriers of thickness 3 monolayers.\nThe emitter and collector contact regions are heavily doped. One of the key\ntechnologies for this achievement is the precise control of epitaxial growth of ultrathin\nsemiconductor heterostructures. The structural design of oscillators and\nmicrofabrication technology are also crucial. To achieve oscillations in the terahertz\nregime, this programme will examine a novel RTD structure designs with ultra thin\nAlAs tensile barriers and highly compressive InGaAs quantum wells, which effectively\nreduces both the operating bias voltage and electron transit time in the collector\ndepletion region. InGaAs/AlAs RTD oscillator with 0.9-nm-thick barriers will be\nstudied for fundamental oscillations at frequencies > 1 THz at room temperature. This\nprogramme will examine the integration of RTDs with RF circuits to form complete\nnarrow band emitters in the THz region for use as high power emitters in CW THz\nimaging systems.\n\n"], "extra_text": ["", "\n\n\n\n"], "status": ["", "Closed"]}
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| April 11, 2022, 1:47 a.m. |
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{"external_links": [15572]}
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| April 11, 2022, 1:47 a.m. |
Created
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[{"model": "core.project", "pk": 4089, "fields": {"owner": null, "is_locked": false, "coped_id": "b490b220-1449-40db-a0ef-f652a52f75af", "title": "", "description": "", "extra_text": "", "status": "", "start": null, "end": null, "raw_data": 19103, "created": "2022-04-11T01:37:53.704Z", "modified": "2022-04-11T01:37:53.704Z", "external_links": []}}]
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