High-temperature Silicon Carbide Electronics (HITSIC)

Find Similar History 32 Claim Ownership Request Data Change Add Favourite

Title
High-temperature Silicon Carbide Electronics (HITSIC)
CoPED ID
821f26e9-188d-434d-a1db-553044f7879b
Status
Closed
Funders
Innovate UK
Innovate UK
Value
£871,550
Start Date
Sept. 30, 2008
End Date
June 29, 2012
Description

More Like This


This project will demonstrate a new Silicon Carbide (SiC) materials process to realise high-temperature electronics (above 300°C with 400° C as target) for energy applications which needs basic research to address challenges associated with realising a scaleable semiconductor process. The project will model the device process and performance, will asses prototype devices, and will develop and demonstrate practical SiC-based circuits for power electronic gate drive and sensor applications focused on the energy and harsh environment sectors. In addition the project will research and develop new SiC device models and assess these against practical results. The novel and timely basic research project will research Silicon Carbide (SiC) materials and processes for Complementary Metal Oxide Semiconductor (CMOS) structures to provide a design and manufacturing capability for high temperature SiC low-voltage electronics. Target applications are: efficient electrical energy generation, distribution and utilisation; extreme environment sensors and instrumentation for oil, gas, and renewables, and; automotive and aerospace systems. Significant commercial benefits in all of the target application areas identified will be realised.

No people listed.

Subjects by relevance
  1. Semiconductors
  2. Electronics
  3. Electrical engineering
  4. Power electronics
  5. Sensors
  6. Projects
  7. Semiconductor technology
  8. Energy
  9. High temperature research
  10. Energy efficiency
  11. Electronic components

Extracted key phrases
  1. High temperature sic low
  2. Temperature Silicon Carbide Electronics
  3. New Silicon Carbide
  4. Timely basic research project
  5. New sic device model
  6. Temperature electronic
  7. Material process
  8. Device process
  9. Scaleable semiconductor process
  10. Target application area
  11. Power electronic gate drive
  12. Energy application
  13. Practical sic
  14. Voltage electronic
  15. Sensor application

Related Pages

UKRI project entry

UK Project Locations