Feasibility assessment of a new low-cost Gallium Nitride (GaN) microinverter for domestic solar photovoltaic applications

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Title
Feasibility assessment of a new low-cost Gallium Nitride (GaN) microinverter for domestic solar photovoltaic applications
CoPED ID
f314bdec-5f27-4553-9f53-57a7f7587093
Status
Closed
Funders
Innovate UK
Innovate UK
Value
£49,464
Start Date
July 31, 2014
End Date
Nov. 30, 2014
Description

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The project aims to study, assess and quantify the technical and commercial feasibility of a laboratory-proven Gallium Nitride (GaN) Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) technology for solar microinverters. The patented GaN device design enables 30% reduction in the fabrication cost of GaN MOSFET and 45% increase in device reliability. It can potentially reduce the Levelised Cost of Energy (LCOE) for domestic solar applications by 12% as compared to commercial Silicon (Si) based microinverters.

Zagres Limited LEAD_ORG
Zagres Limited PARTICIPANT_ORG

Ashknaz Oraee PM_PER

Subjects by relevance
  1. Semiconductors
  2. Solar energy
  3. Costs
  4. Transistors
  5. Gallium nitride
  6. Semiconductor technology
  7. Electronics

Extracted key phrases
  1. Cost Gallium Nitride
  2. Domestic solar photovoltaic application
  3. Commercial feasibility
  4. Feasibility assessment
  5. Domestic solar application
  6. GaN MOSFET
  7. Solar microinverter
  8. Oxide Semiconductor Field Effect Transistor
  9. Patented gan device design
  10. Fabrication cost
  11. New low
  12. Commercial Silicon

Related Pages

UKRI project entry

UK Project Locations