Power electronics is an integral part of our lives – every stage of electrical energy conversion
from the point of generation (including renewable sources such as wind, solar, etc.), through
transmission to the point of consumption (including industrial and automotive applications,
household appliances and consumer electronics) is controlled by power electronics. Global
energy demand and corresponding CO2 emissions are predicted to increase by more than 50%
in the next 25 years. A sensible solution to addressing growing energy consumption
requirements is not by creating more - but by wasting less. This can only be achieved if new
technologies are deployed to dramatically increase energy efficiency of power electronics
applications.
Power devices are at the heart of power electronics systems: innovative device designs which
require less silicon area and operate with lower power losses act as main enablers for
procurement of more efficient energy conversion solutions. We will develop a new class of
ultra-compact high voltage power devices - Smart Lateral Insulated Gate Bipolar Transistors
(Smart LIGBTs). These devices will have 3 to 5 times smaller chip area and 3 to 10 times
faster switching than other lateral bipolar devices realised in bulk Si. Such devices will enable
more energy efficient system performance including lower stand-by losses, presently
responsible for around 10% of total electricity bill. Fabrication is based on standard CMOS
steps which will ensure low cost, high yield, fast development and efficient implementation
in a range of power electronics products. Reduced device area and lateral geometry will
enable integration of additional intelligence and peripheral components on the same chip and
use of smaller, more compact packages for higher power applications. This will result in
further miniaturisation of products such as portable power supplies for mobile phones, tablets
and laptops as well as more efficient, compact drivers for LED lighting.