| Feb. 13, 2024, 4:20 p.m. |
Created
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[{"model": "core.projectfund", "pk": 65723, "fields": {"project": 13954, "organisation": 11073, "amount": 51058, "start_date": "2011-11-01", "end_date": "2012-07-31", "raw_data": 176593}}]
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| Jan. 30, 2024, 4:25 p.m. |
Created
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[{"model": "core.projectfund", "pk": 58550, "fields": {"project": 13954, "organisation": 11073, "amount": 51058, "start_date": "2011-11-01", "end_date": "2012-07-31", "raw_data": 151953}}]
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| Jan. 2, 2024, 4:15 p.m. |
Created
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[{"model": "core.projectfund", "pk": 51395, "fields": {"project": 13954, "organisation": 11073, "amount": 51058, "start_date": "2011-11-01", "end_date": "2012-07-31", "raw_data": 131685}}]
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| Dec. 5, 2023, 4:24 p.m. |
Created
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[{"model": "core.projectfund", "pk": 44147, "fields": {"project": 13954, "organisation": 11073, "amount": 51058, "start_date": "2011-11-01", "end_date": "2012-07-30", "raw_data": 97211}}]
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| Nov. 27, 2023, 2:15 p.m. |
Added
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{"external_links": []}
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| Nov. 21, 2023, 4:41 p.m. |
Created
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[{"model": "core.projectfund", "pk": 36860, "fields": {"project": 13954, "organisation": 11073, "amount": 51058, "start_date": "2011-11-01", "end_date": "2012-07-30", "raw_data": 72114}}]
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| Nov. 21, 2023, 4:41 p.m. |
Created
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[{"model": "core.projectorganisation", "pk": 109153, "fields": {"project": 13954, "organisation": 14829, "role": "PARTICIPANT_ORG"}}]
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| Nov. 21, 2023, 4:41 p.m. |
Created
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[{"model": "core.projectorganisation", "pk": 109152, "fields": {"project": 13954, "organisation": 14829, "role": "LEAD_ORG"}}]
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| Nov. 21, 2023, 4:41 p.m. |
Created
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[{"model": "core.projectperson", "pk": 68496, "fields": {"project": 13954, "person": 19300, "role": "PM_PER"}}]
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| Nov. 20, 2023, 2:05 p.m. |
Updated
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{"title": ["", "Commercial SiC Power Electronics"], "description": ["", "\nThe current power semiconductor market ($10bn) is dominated by silicon. The performance\nof which has improved steadily over the past 20 years, but has now reached the stage where\nits fundamental material properties limit the capability and efficiency of power semiconductor\nsystems. The superior material properties of Silicon Carbide (SiC) have been recognised as\nthe way forward yet to date SiC transistors have very poor performance and production costs\nare prohibitive. This proof of concept proposal is to prove Anvil Semiconductor\u2019s solutions\nto the two main issues preventing SiC taking its potential market share ($2.6bn): the cost of\nthe substrate and the ability to produce good quality gate oxides (and thus produce good\nquality transistors).\nThis work enables the development of low cost Silicon Carbide (SiC) power electronic\ncomponents suitable for mass market applications, the first of which are electric vehicles and\npower inverters for domestic photovoltaics. Together these are predicted to account for 60%\nof the potential SiC market (2019).\nThe current generation of SiC components based on the hexagonal form (4H-SiC) are\ninherently expensive; a 100mm wafer of 4H-SiC costs ~£1,000 compared to ~ £20 for a Si\nwafer. Further it is likely that 100mm will be the main 4H-SiC wafer diameter for at least the\nnext six years- restricting size based economies of scale. Thus 4H-SiC components are\nunlikely to be viable in cost sensitive applications. A low cost alternative route using a thin\nSiC layer deposited on a Si wafer has been demonstrated on 150mm wafers and provides a\nroute to even larger diameters (3C-SiC/Si). This has technical challenges but Anvil\nSemiconductors has some key IP which it needs to demonstrate has no technological barriers\nto prevent it making the components needed by system builders.\nAn ideal application of SiC is the drive inverter for electric vehicles because of its improved\npower efficiency, increased robustness in high temperature environments and importantly the\ndramatic reduction of size/mass of the system. Yole (Appendix A) show that the use of SiC\ncomponents instead of Si would result in an overall system cost increase of $31; not an\nacceptable solution. However with the lower cost version of SiC proposed here, there would\nbe a system saving of ~$100. This would enable car designers to take advantage of the space,\nenergy and robustness savings of SiC.\nAnother application for low cost SiC devices is the power conversion in domestic scale\n(~5kW) photovoltaic panels. Although current Si-based inverters are very efficient (97%),\nthey are bulky and expensive, and have slow switching speeds leading to the need for\nphysically large passive components and heatsinks. SiC components will reduce the size and\ncosts of the capacitors, inductors and system cooling needed. However, a component\ntechnology with similar costs to Si is essential in order to achieve an overall reduction in\nsystem cost, ie 3C-SiC/Si.\n\n"], "extra_text": ["", "\n\n\n\n"], "status": ["", "Closed"]}
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| Nov. 20, 2023, 2:05 p.m. |
Added
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{"external_links": [55104]}
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| Nov. 20, 2023, 2:05 p.m. |
Created
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[{"model": "core.project", "pk": 13954, "fields": {"owner": null, "is_locked": false, "coped_id": "98a50ef0-1256-4487-bd00-a30b5554e8f6", "title": "", "description": "", "extra_text": "", "status": "", "start": null, "end": null, "raw_data": 72097, "created": "2023-11-20T13:52:12.407Z", "modified": "2023-11-20T13:52:12.407Z", "external_links": []}}]
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