Existing light emitting diodes (LEDs) do not emit light directionally, so in many applications not all photons are coupled into the optical system and result in wasted energy. This is notably true in image projection systems (a US$3B annual market) which require bigger, much brighter LEDs to replace inefficient discharge lamps. The aim of this project is to advance the development of new large area, high brightness InGaN LEDs with highly directional emission and capable of operating at high electrical power density to achieve the high on-screen lumens needed for advanced digital projectors. The innovation will involve realising such LEDs on Silicon substrates, the incorporation of novel nanostructures by cost effective methods to direct the light output, and wafer bonding to thermally conducting substrates to address the heat extraction problem. The new LEDs will also be tested in a novel projector design that requires multiple highly directional LEDs, to expand market opportunities.